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| AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. Low Gate Charge Fast Switching Characteristics Simple Drive Requirement G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 160mA Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-92 package is universally used for all commercial-industrial applications. G D TO-92 S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 600 30 160 100 300 0.83 -55 to 150 -55 to 150 Units V V mA mA mA W Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Max. Value 150 Unit /W Data & specifications subject to change without notice 200315072-1/4 AP01L60AT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=1mA Min. 600 2 - Typ. 0.8 0.8 6.0 1.0 2.5 6.6 5.0 11.7 9.2 170 30.7 5.1 Max. Units 12 4 10 100 100 10 270 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC) o VGS=10V, ID=0.5A VDS=VGS, ID=250uA VDS=10V, ID=0.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= 30V ID=0.1A VDS=480V VGS=10V VDD=300V ID=1A RG=3.3,VGS=10V RD=300 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V IS=160mA, VGS=0V Min. - Typ. - Max. Units 160 1.2 mA V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 AP01L60AT 1.5 1 T A =25 C ID , Drain Current (A) o 10V 6.0V 5.5V 5.0V ID , Drain Current (A) T A =150 o C 0.75 10V 5.0V 1 4.5V 0.5 0.5 V GS =4.5V V GS =4.0V 0.25 0 0 12 24 36 0 0 10 20 30 40 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 I D =0.5A V GS =10V 1.1 Normalized BVDSS (V) 2 Normalized RDS(ON) 1.6 1 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 10 4 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 3 T j = 150 o C 0.1 o T j = 25 C VGS(th) (V) 2 1 -50 IS (A) 0.01 0 0.4 0.8 1.2 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP01L60AT 16 1000 f=1.0MHz VGS , Gate to Source Voltage (V) 12 Ciss I D =0.1A V DS =480V 100 8 C (pF) Coss 10 4 Crss 0 1 0 2 4 6 8 1 10 19 28 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 0.2 1 0.8 ID , Drain Current (A) 0.15 0.6 0.1 PD (W) 25 50 75 100 125 150 0.4 0.05 0.2 0 0 0 50 100 150 T A , Case Temperature ( o C) T A , Case Temperature ( o C) Fig 9. Maximum Drain Current v.s. Fig 10. Typical Power Dissipation Case Temperature VDS 90% QG 10V QGS 10% VGS td(on) tr td(off) tf Charge Q QGD VG Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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